Preliminary Technical Information
Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFR24N90P
V DSS
I D25
R DS(on)
t rr
=
=
900V
13A
460 m Ω
300 ns
Fast Intrinsic Diode
ISOPLUS247
Symbol
V DSS
V DGR
V GSS
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Maximum Ratings
900
900
± 30
V
V
V
E153432
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 40
13
48
V
A
A
Isolated Tab
I A
E AS
T C = 25 ° C
T C = 25 ° C
12
1
A
J
G = Gate
S = Source
D
= Drain
dV/dt
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
15
V/ns
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
F C
Weight
T C = 25 ° C
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
Mounting force
230
-55 ... +150
150
-55 ... +150
300
260
2500
20..120/4.5..27
5
W
° C
° C
° C
° C
° C
V~
N/lb.
g
Fearures
Silicon chip on Direct-Copper Bond
(DCB) substrate
Isolated mounting surface
2500V electrical isolation
Fast intrinsic diode
Avalanche rated
Low package inductance
Advantages
Low gate drive requirement
High power density
Applications:
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Switched-mode and resonant-mode
power supplies
BV DSS
V GS = 0V, I D = 1mA
900
V
DC-DC Converters
Laser Drivers
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 200
V
nA
AC and DC motor drives
Robotics and servo controls
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 12A, Note 1
T J = 125 ° C
25 μ A
2 mA
460 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS100060(10/08)
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